Cleaning solutions are a series of key chemical reagents used to remove contaminants from the surface of wafers during the chip manufacturing process. Their purity, performance and stability directly determine the yield and reliability of semiconductor devices.
• Aluminum Wire Cleaning Process (Backend) for ≥0.13μm
• Application of Cleaning Process for MEMS Deep Silicon Etching
• 6/8/12-inch Processes
• Supporting Equipment: Wet Bench or Spray Spin Tool
Product Characteristics
• High-purity raw materials combined with advanced filtration technology ensure the purity and cleanliness of chemical products.
• Adopting advanced formulation technology to ensure complete dissolution and removal of polymer during cleaning, achieving zero residue and avoiding adverse effects on subsequent processes.
• Effectively inhibits electrochemical corrosion, maintains interconnect integrity, and improves chip yield and reliability.
• Stable and reliable service life; equipped with sealed bath to achieve longer cleaning lifetime and reduce costs.
Damascene Copper Wire Cleaning
Product Applications
• 14-28nm Copper Interconnect Damascene Cleaning Process
• 40-130nm Copper Interconnect Damascene Cleaning Process
• 12-inch Process
• Supporting Equipment: Single Wafer
Product Characteristics
• Exhibits excellent material compatibility with low aggressivity toward various materials including Cu, Low‑K, Oxide, delivering stable and high‑efficiency cleaning performance.
• Features extremely low metal ion content, effectively preventing metal contamination during processing and ensuring high purity of the wafer surface and stable device performance.
• Delivers a clean surface after cleaning with no polymer or residue left behind, significantly reducing defects in subsequent processes and upholding high-quality standards in semiconductor manufacturing.
• Exhibits minimal corrosivity to various film stacks, enabling thorough cleaning while protecting the integrity and functionality of wafer structures, thus extending device service life.
Photoresist Stripper
Product Applications
• Used in the photoresist cleaning process for the MEMS vanadium oxide process
• Used in the photoresist cleaning process for the MEMS vanadium oxide process and compound semiconductors
• 6/8-inch processes
• Supporting Equipment: Wet Bench or Single Wafer
Product Characteristics
• Compatible with a wide range of materials, including Al/Cu alloy, Al/Si alloy, Ti, Oxide, SiN, PI, Vox, Ni, etc., and can be widely applied to various process requirements and material combination scenarios.
• Photoresist and bottom anti-reflective coating (BARC) can be completely removed without any chemical residue, ensuring cleanliness and surface quality for subsequent processes and avoiding adverse effects on device performance.
• Exhibits extremely low corrosion to various functional films during processing, effectively protecting the integrity and electrical properties of wafer structures, and improving product yield and reliability.
• Features excellent service life and stable process performance, maintaining high process efficiency under long-term continuous operation.
Post CMP
Product Applications
• 14-40nm Copper Interconnect Damascene Cleaning Process after CMP
• 12-inch Process
• Supporting Equipment: AMAT and EBARA
Product Characteristics
• Compatible with Co, Cu, Low‑k, Oxide and other materials, with significant inhibition of metal corrosion and extremely low etch rates for Low‑k and Oxide.
• Features excellent wettability and cleaning efficiency, enabling efficient removal of contaminants.
• Provides favorable selectivity and low Cu corrosion, targeting and removing contaminants while maintaining an ultra‑low corrosion rate.
• Offers strong surface passivation and protection for Cu, extending Q‑time, providing long‑term corrosion and oxidation resistance, and significantly prolonging wafer storage time.
• Features a wide process window; the cleaning solution is insensitive to variations in process parameters and exhibits high process tolerance.
