Ticker : 300236.SZ
CN
High Selectivity SiN
Product Applications
  • • 3D NAND Flash Silicon Nitride Etching Process
  • • 12-inch Process
  • • Supporting Equipment: TEL and DNS
Product Characteristics
  • • Exhibits outstanding etching selectivity with a selectivity ratio exceeding 2000:1, enabling high-precision etching between different materials, effectively avoiding damage to non-target areas and ensuring precise control.
  • • Demonstrates excellent protection performance for Poly and OX, preventing surface damage.
  • • Features an extremely low level of metal ion contamination, significantly reducing the risk of impurity introduction during etching and meeting the stringent requirements of advanced semiconductor manufacturing.