Photoresist
Photoresist is the core photosensitive material of the lithography process. Through coating, exposure and development, it accurately transfers the circuit design on the photomask onto the wafer surface, forming a pattern barrier for subsequent etching or ion implantation.
- • Logic: 2X nm technology node; Memory: 1X-2X nm technology node
- • 8/12-inch processes
- • Supporting Equipment: ASML-1900Gi
- •Ultra-low line width roughness (LWR) effectively ensures smooth and precise line edges, thereby improving the overall reliability and performance stability of the product.
- •Well-designed process window provides a wide tolerance range for process parameters, making the production process more flexible and controllable, and significantly enhancing manufacturing efficiency and product yield.
- •Topcoat-free immersion photoresist forms a hydrophobic barrier layer on its surface spontaneously, which suppresses the spreading and penetration of immersion water, inhibits the leaching of key components, and reduces defects such as water marks. As a result, it achieves stable critical dimension (CD) and defect performance in immersion lithography without using an additional topcoat.
- •Excellent resolution: Continuous patterns without bridging or line breakage can be obtained even at smaller half-pitch, while maintaining low LER/LWR. It also exhibits a larger process window (higher exposure latitude (EL) and greater depth of focus (DOF)) near the target CD.
- • Application: Memory Via Layer
- • Features an excellent process window with a wide operating range and high fault tolerance, adapting to production requirements under various complex conditions and ensuring stable and efficient processing.
- • Exhibits outstanding hole circularity with regular geometry and minimal deviation, significantly improving product precision and consistency to meet high-standard application requirements.
- • Provides high resolution and exceptional detail performance, clearly presenting microstructures and patterns, suitable for scenarios with stringent demands on image quality.
- • PAD Process and High-Energy Ion Implantation
- • Multiple Dry Etching for IC 3D NAND Step Layers
- • 8/12-inch Processes
- • Supporting Equipment: NIKON-205C
- • Features a straight profile with excellent verticality and structural stability. It maintains excellent physical morphology even in high-temperature environments, demonstrating outstanding heat resistance and durable structural integrity.
- • Boasts a favorable process window with high operating tolerance and strong adaptability. It retains stable processing performance across a wide range of process parameters, helping improve production efficiency and product consistency.
- • Delivers good resolution, enabling clear and precise rendering of fine details with sharp edges and high contrast. It is suitable for the fabrication and replication of high-precision patterns and microstructures.
- • Exhibits high resistance to cracking and delamination, with excellent material bonding strength. It effectively resists crack propagation and interlayer separation caused by internal and external stresses, significantly enhancing product reliability and service life.
- • PAD Process and High-Energy Ion Implantation
- • 6/8/12-inch Processes
- • Supporting Equipment: NIKON-i14
- • Maintains highly stable image resolution, ensuring consistent image output quality without any fluctuation or deviation.
- • Features extremely clear and sharp graphic edges with distinct outlines, strong detail expression, and excellent visual effects.
- • Provides precise and consistent line width control with uniform line thickness and exceptional stability, fully meeting the requirements of high-precision output.
